Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes

0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.046 ⇑ Corresponding author. Tel.: +1 408 674 2779; fax E-mail address: [email protected] (T. N The EBIC mode of SEM was used to image individual dislocations and measure the effect of local stress on EBIC contrast of threading dislocations (TDs) in GaN LEDs. In this method, EBIC shows that localized residual stress increases the recombination strength, c, of TDs, which increases non-radiative recombination and leakage current in GaN LEDs. 2012 Elsevier Ltd. All rights reserved.